Basic Electricity:
Electrons in motion.
Negatively charged particles
Move from place of negative charge to one of positive charge.
Electrons generally flow through matter.
Occurs most easily in metals.
Conductors: free flow of electrons. Metals
Insulators: very little free flow of electrons. Non-metals.
Semi-conductors: electrons can be made to flow.
RESISTANCE: opposition to current flow.
OHM: unit measuring resistance to flow.
Lower the resistance, the easier the flow.
Electrons measured in groups.
COULOMB: 6.24 x 10 to the 18th electrons.
Electrons are measured in motion.
AMPERE or AMP = One coulomb per second.
ELECTROMOTIVE FORCE (EMF):
Flow of electrons from high concentration or potential to low.
Polential is measured in VOLTS.
One VOLT = EMF required to push one COULOMB per SECOND through one OHM.
Electricity can perform work when in motion.
This work is expressed in Watts.
WATTS: a measure of Power, i.e. Work performed.
FORMULAE:
OHMS LAW.
Intensity = EMF/ Resistance
I = E/R
Can be expessed as:
I=E/R E = IR R = E/I
POWER formula:
Work = Intensity x Force
PIE Law:
P = IE Power = Intensity x EMF
or in the units of measure:
West Virginia Law:
Watts = Volts x Amps
By combining these, you can derive the characteristics of
electrical devices in a circuit.
Examples:
500 w. lamp at 100 v.
A=W/V = 500/100 = 5 amps
R=E/I = 100/5 = 20 ohms
1000 w. lamp at 100 v
A=W/V = 1000/100 = 10 amps
R = 100/10 = 10 ohms
CIRCUITS:
Basic principles:
-The higher the source potential, the higher the flow.
-Breaking circuit stops flow.
-The larger the conductor, the easier the flow.
-The lower the resistance of load, the faster the flow.
-To much flow breaks the load.
-When source is drained, flow stops.
Series and parellel circuits
Series: flow through each element sequentially.
Parellel: flow through multiple elements simultaneously.
Resistance in Circuits:
Series Circuits: total resistance directly proportional
Parellel Circuits: total resistance inversly proportional
Maintained by: Mick Alderson (alderson@uwosh.edu)
Last modified: 8/12/2000
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